Samsung Electronics announced its new 28 megapixel (MP) APS-C BSI CMOS image sensor for digital cameras.
The S5KVB2 is the industry’s first APS-C sensor to adopt back-side illuminated (BSI) pixel technology.
Samsung 28 Megapixel APS-C BSI CMOS Sensor
SAMSUNG LAUNCHES INDUSTRY’S FIRST 28-MEGAPIXEL APS-C BSI CMOS IMAGE SENSOR FOR DIGITAL CAMERAS
Utilises advanced back-side illuminated (BSI) pixel technology and 65-nanometer (nm) copper process technology to offer outstanding image quality and energy efficiency
London UK – 17th September, 2014 – Samsung Electronics today announced its new 28 megapixel (MP) APS-C* BSI CMOS image sensor for digital cameras. The S5KVB2 is designed into Samsung’s new compact system camera, the NX1, and will be showcased alongside the camera at Photokina 2014 held in Cologne, Germany until September 21st.
Using Samsung’s advanced BSI pixel technology, the new S5KVB2 sensor offers superior light absorption. Thanks to its 65-nanometer (nm) low-power copper process as well as fine design technology, this new imager satisfies the requirements for power efficiency and noiseless high quality imaging in high-end compact system camera formats.
“We’re seeing more and more demand in the market for high-end image sensors in digital cameras, and are excited that this is something we are now able to offer professional photographers with the launch of our new imager today,” said Paul Scott, Head of Marketing, Samsung Digital Imaging UK and Ireland. “We look forward to demonstrating to delegates at Photokina and our customers the fantastic features that we have packed into the S5KVB2, from its higher resolution, superior image quality, and faster shooting speed with low power consumption.”
The S5KVB2 is the industry’s first APS-C sensor to adopt back-side illuminated (BSI) pixel technology. The BSI structure moves the metal layers to the rear side of the photodiode to reduce the loss of light. Applying BSI pixels, Samsung’s latest imager improves the light sensitivity of each pixel and increases light absorption in peripheral areas by approximately 30 percent, resulting in crisper, sharper images compared to a conventional front-side illumination (FSI) pixel-based imager.
By moving the position of the photo diode, the sensor’s metal wiring layout is better optimised for faster continuous speed. As a result, the S5KVB2 offers 30fps** video recording at Ultra HD resolution, being capable of delivering ultimate video quality on a camera.
In addition, the imager uses Samsung’s advanced 65nm low-power copper process, which is well ahead of the 180nm aluminium process generally adopted in the camera sensor industry. Based on the finer ICs and the use of copper, the 65nm copper process enables power consumption to be reduced dramatically compared to an imager based on a previous process technology. As a result, the new S5KVB2 imager has less thermal emissions. Through the advanced fabrication process and IC design, the S5KVB2 also decreases random noise significantly.
* Editors’ Note: Advanced Photo System type-C (APS-C) is an image sensor format approximately equivalent in size of 25.1 × 16.7 mm, an aspect ratio of 3:2.
** Editor’s Note 2: For video recording, the imager supports 6,512×3,663 30fps(Full read-out)or Full-HD 120fps.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs, cameras, home appliances, printers, LTE systems, medical devices, semiconductors and LED solutions. We employ 286,000 people across 80 countries with annual sales of US$216.7 billion. To discover more, please visit http://www.samsung.com.